小林清輝

コバヤシキヨテル

教授
学位：博士（工学）

基本情報

所属

工学部 / 電気電子工学科
総合理工学研究科 / 総合理工学専攻
工学研究科 / 電気電子工学専攻

詳細情報

研究キーワード

不揮発性半導体メモリ
絶縁薄膜の物性と電気特性
電荷捕獲絶縁膜
半導体集積回路プロセス技術
電荷捕獲メモリ

研究分野

ものづくり技術（機械・電気電子・化学工学）電気電子材料工学
ものづくり技術（機械・電気電子・化学工学）電子デバイス、電子機器
ナノテク・材料薄膜、表面界面物性

委員歴

- 電気化学会電子材料委員会副委員長
- 半導体界面制御技術第１５４委員会委員

論文

Experimental Extraction of the Charge Centroid of Holes Trapped in Metal-OxideNitride-Oxide-Semiconductor Memories

金属電極の仕事関数がシリコン窒化膜の紫外線照射後の伝導電流に及ぼす影響

書籍等出版物

集積回路のための半導体デバイス工学
ECS Transactions, Volume 75, Issue 32, PRiME 2016/230th ECS Meeting, October 2, 2016 - October 7, 2016, Honolulu, Nonvolatile Memories 5
ECS Transactions Volume 69, Issue 3 228th ECS Meeting October 11, 2015 - October 15, 2015 Phoenix, AZ Nonvolatile Memories 4
ECS Transactions Volume 64 Cancun, Mexico, October 5 – 9, 2014 2014 ECS and SMEQ Joint International Meeting
電気化学便覧第6版
JAPANESE JOURNAL OF APPLIED PHYSICS, Volume 48, Number 5, May 2009, Special Issue Dielectric Thin Films for Future ULSI Devices: Science and Technology
2004 半導体テクノロジー大全

講演・口頭発表等

Experimental Extraction of the Charge Centroid of Holes Trapped in Metal-OxideNitride-Oxide-Semiconductor Memories
Influence of the Work Function of Metal Gate Electrodes on UV-Light-Induced Conduction Current through Silicon Nitride Films
Application of Silicon Carbonitride Dielectric Films to Charge Trapping Nonvolatile Memories
Mechanism of Charge Transport in UV-Illuminated Silicon Nitride Films
Internal Repair for Plasma Damaged Low-k Films by Methylating Chemical Vapor
Photoinduced leakage currents and paramagnetic defects in amorphous SiCN and Si3N4 dielectrics for ULSI applications
Photoinduced Leakage Current in SiCN Dielectrics for Copper Diffusion Barriers
Characterization of Defects Generated in SiCN Dielectrics for Copper Diffusion Barriers
Oxygen Distribution in Nickel Silicide Films Analyzed by Time-of-Flight Secondary Ion Mass Spectrometry
Leakage Current and Paramagnetic Defects in SiCN Dielectrics for Copper Diffusion Barrier
Depth profile analysis of nickel silicide films using time-of-flight secondary ion mass spectrometry (TOF-SIMS)
Impact of nitridation engineering on microscopic SILC characteristics of sub-10-nm tunnel dielectrics
Temperature dependence of TDDB characteristics of thin SiO2film for flash memory
Degradation of the characteristics of p+poly MOS capacitors with NO nitrided gate oxide due to post nitrogen annealing
High reliability of nanometer-range N2O-nitrided oxides due to suppressing hole injection
Impact of high pressure dry O2 oxidation on sub-quarter micron planarized LOCOS
Effect of N2O or NO annealing of wet oxide at different times on TDDB characteristics
Reliability evaluation of thin gate oxide using a flat capacitor test structure
Simulation of plastic deformation of silicon during thermal oxidation