小林 清輝

Kobayashi Kiyoteru

  • 教授
  • 学位:博士(工学)

基本情報

所属

  • Undergraduate School of Engineering / Department of Electrical and Electronic Engineering
  • Graduate School of Science and Technology / Course of Science and Technology
  • Graduate School of Engineering / Course of Electrical and Electronic Engineering

詳細情報

研究キーワード

  • Non-volatile semiconductor memory
  • Nature and electrical properties of thin dielectric film
  • Charge trap film
  • LSI process technology
  • Charge trap memory

研究分野

  • Manufacturing technology (mechanical, electrical/electronic, chemical engineering) Electric/electronic material engineering
  • Manufacturing technology (mechanical, electrical/electronic, chemical engineering) Electronic devices and equipment
  • Nanotechnology/Materials Thin-film surfaces and interfaces

論文

Electrical analysis of energy depth of electron trap states in silicon nitride films for charge-trap flash memory application

Hole trapping capability of silicon carbonitride charge trap layers

First-principles study of defect levels caused by transition metal atoms in silicon nitride for non-volatile memory applications

Experimental Extraction of the Charge Centroid of Holes Trapped in Metal-OxideNitride-Oxide-Semiconductor Memories

Hole trapping characteristics of silicon carbonitride (SiCN)-based charge trapping memories evaluated by the constant-current carrier injection method

Extraction of energy distribution of electrons trapped in silicon carbonitride (SiCN) charge trapping films

Evaluation of hole trapping characteristics in MONOS-type memories using the constant-current carrier injection method

Experimental extraction of the charge centroid in SiCN-based charge trapping memories using the constant-current carrier injection method

Characterization of low-dielectric constant silicon carbonitride (SiCN) dielectric films for charge trapping nonvolatile memories

Thermal stability of paramagnetic defect centers in amorphous silicon nitride films

Thermal annealing effect on ultraviolet-light-induced leakage current in low-pressure chemical vapor deposited silicon nitride films

Effect of metal work function on conduction current in silicon nitride films after exposure to ultraviolet illumination

Charge Trapping Properties of Silicon Carbonitride Storage Layers for Nonvolatile Memories

Low-Dielectric Constant SiCN Charge Trapping Layer for Nonvolatile Memory Applications

Effectiveness of Dimethyl Carbonate and Dipivaloyl Methane Chemicals for Internal Repair of Plasma-Damaged Low-k Films

Ultraviolet Light-Induced Conduction Current in Silicon Nitride Films

Conduction Currents and Paramagnetic Defect Centers in UV-Illuminated Silicon Nitride Films

Oxygen distribution in nickel silicide films analyzed by time-of-flight secondary ion mass spectrometry

Photoinduced Leakage Currents in Silicon Carbon Nitride Dielectrics for Copper Diffusion Barriers

Photoinduced paramagnetic defects and negative charge in SiCN dielectrics for copper diffusion barriers

書籍等出版物

  • ECS Transactions, Volume 75, Issue 32, PRiME 2016/230th ECS Meeting, October 2, 2016 - October 7, 2016, Honolulu, Nonvolatile Memories 5
  • ECS Transactions Volume 69, Issue 3 228th ECS Meeting October 11, 2015 - October 15, 2015 Phoenix, AZ Nonvolatile Memories 4
  • ECS Transactions Volume 64 Cancun, Mexico, October 5 – 9, 2014 2014 ECS and SMEQ Joint International Meeting
  • JAPANESE JOURNAL OF APPLIED PHYSICS, Volume 48, Number 5, May 2009, Special Issue Dielectric Thin Films for Future ULSI Devices: Science and Technology

講演・口頭発表等

  • First-Principles Calculation for Defect Levels of 3d Transition Metals Doped in Silicon Nitride
  • Experimental Extraction of the Charge Centroid of Holes Trapped in Metal-OxideNitride-Oxide-Semiconductor Memories
  • Influence of the Work Function of Metal Gate Electrodes on UV-Light-Induced Conduction Current through Silicon Nitride Films
  • Application of Silicon Carbonitride Dielectric Films to Charge Trapping Nonvolatile Memories
  • Mechanism of Charge Transport in UV-Illuminated Silicon Nitride Films
  • Internal repair for plasma damaged low-k films by methylating chemical vapor
  • Photoinduced leakage currents and paramagnetic defects in amorphous SiCN and Si3N4 dielectrics for ULSI applications
  • Photoinduced Leakage Current in SiCN Dielectrics for Copper Diffusion Barriers
  • Characterization of Defects Generated in SiCN Dielectrics for Copper Diffusion Barriers
  • Oxygen Distribution in Nickel Silicide Films Analyzed by Time-of-Flight Secondary Ion Mass Spectrometry
  • Depth profile analysis of nickel silicide films using time-of-flight secondary ion mass spectrometry (TOF-SIMS)
  • Impact of nitridation engineering on microscopic SILC characteristics of sub-10-nm tunnel dielectrics
  • Temperature dependence of TDDB characteristics of thin SiO2film for flash memory
  • Degradation of the characteristics of p+poly MOS capacitors with NO nitrided gate oxide due to post nitrogen annealing
  • High reliability of nanometer-range N2O-nitrided oxides due to suppressing hole injection
  • Impact of high pressure dry O2 oxidation on sub-quarter micron planarized LOCOS
  • Effect of N2O or NO annealing of wet oxide at different times on TDDB characteristics
  • Reliability evaluation of thin gate oxide using a flat capacitor test structure
  • Simulation of plastic deformation of silicon during thermal oxidation

所属学会

  • The Electrochemical Society
  • THE ELECTROCHEMICAL SOCIETY OF JAPAN

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