Kobayashi Kiyoteru

教授
学位：博士（工学）

基本情報

所属

Undergraduate School of Engineering / Department of Electrical and Electronic Engineering
Graduate School of Science and Technology / Course of Science and Technology
Graduate School of Engineering / Course of Electrical and Electronic Engineering

詳細情報

研究キーワード

Non-volatile semiconductor memory
Nature and electrical properties of thin dielectric film
Charge trap film
LSI process technology
Charge trap memory

研究分野

Manufacturing technology (mechanical, electrical/electronic, chemical engineering) Electric/electronic material engineering
Manufacturing technology (mechanical, electrical/electronic, chemical engineering) Electronic devices and equipment
Nanotechnology/Materials Thin-film surfaces and interfaces

委員歴

PRiME 2020, Symposium:H06 - Nonvolatile Memories and Artificial Neural Networks, Symposium organizer Symposium organizer

論文

Electrical analysis of energy depth of electron trap states in silicon nitride films for charge-trap flash memory application

Hole trapping capability of silicon carbonitride charge trap layers

First-principles study of defect levels caused by transition metal atoms in silicon nitride for non-volatile memory applications

Experimental Extraction of the Charge Centroid of Holes Trapped in Metal-OxideNitride-Oxide-Semiconductor Memories

Hole trapping characteristics of silicon carbonitride (SiCN)-based charge trapping memories evaluated by the constant-current carrier injection method

Extraction of energy distribution of electrons trapped in silicon carbonitride (SiCN) charge trapping films

Evaluation of hole trapping characteristics in MONOS-type memories using the constant-current carrier injection method

Experimental extraction of the charge centroid in SiCN-based charge trapping memories using the constant-current carrier injection method

Characterization of low-dielectric constant silicon carbonitride (SiCN) dielectric films for charge trapping nonvolatile memories

Thermal stability of paramagnetic defect centers in amorphous silicon nitride films

Thermal annealing effect on ultraviolet-light-induced leakage current in low-pressure chemical vapor deposited silicon nitride films

Effect of metal work function on conduction current in silicon nitride films after exposure to ultraviolet illumination

Charge Trapping Properties of Silicon Carbonitride Storage Layers for Nonvolatile Memories

Low-Dielectric Constant SiCN Charge Trapping Layer for Nonvolatile Memory Applications

Effectiveness of Dimethyl Carbonate and Dipivaloyl Methane Chemicals for Internal Repair of Plasma-Damaged Low-k Films

Ultraviolet Light-Induced Conduction Current in Silicon Nitride Films

Conduction Currents and Paramagnetic Defect Centers in UV-Illuminated Silicon Nitride Films

Oxygen distribution in nickel silicide films analyzed by time-of-flight secondary ion mass spectrometry

Photoinduced Leakage Currents in Silicon Carbon Nitride Dielectrics for Copper Diffusion Barriers

Photoinduced paramagnetic defects and negative charge in SiCN dielectrics for copper diffusion barriers

書籍等出版物

ECS Transactions, Volume 75, Issue 32, PRiME 2016/230th ECS Meeting, October 2, 2016 - October 7, 2016, Honolulu, Nonvolatile Memories 5
ECS Transactions Volume 69, Issue 3 228th ECS Meeting October 11, 2015 - October 15, 2015 Phoenix, AZ Nonvolatile Memories 4
ECS Transactions Volume 64 Cancun, Mexico, October 5 – 9, 2014 2014 ECS and SMEQ Joint International Meeting
JAPANESE JOURNAL OF APPLIED PHYSICS, Volume 48, Number 5, May 2009, Special Issue Dielectric Thin Films for Future ULSI Devices: Science and Technology

講演・口頭発表等

First-Principles Calculation for Defect Levels of 3d Transition Metals Doped in Silicon Nitride
Determination of charge centroid locations of electrons and holes trapped in silicon nitride charge-trap layers
Determination of Charge Centroid and Density of Holes Trapped in Metal-Oxide-Nitride-Oxide-Semiconductor-type Non-Volatile Memory Devices
Determination of the Charge Centroid of Holes Trapped in MONOS-Type Memories at High Gate Voltages,
Experimental Extraction of the Charge Centroid of Holes Trapped in Metal-OxideNitride-Oxide-Semiconductor Memories
Hole trapping characteristics of SiCN-based charge trapping memories using the constant-current carrier injection method
Hole Trapping Characteristics of Nitride-Based Charge Trapping Memories Using the Constant-Current Carrier Injection Method
Influence of the Work Function of Metal Gate Electrodes on UV-Light-Induced Conduction Current through Silicon Nitride Films
Application of Silicon Carbonitride Dielectric Films to Charge Trapping Nonvolatile Memories
Mechanism of Charge Transport in UV-Illuminated Silicon Nitride Films
Internal repair for plasma damaged low-k films by methylating chemical vapor
Photoinduced leakage currents and paramagnetic defects in amorphous SiCN and Si3N4 dielectrics for ULSI applications
Photoinduced Leakage Current in SiCN Dielectrics for Copper Diffusion Barriers
Characterization of Defects Generated in SiCN Dielectrics for Copper Diffusion Barriers
Oxygen Distribution in Nickel Silicide Films Analyzed by Time-of-Flight Secondary Ion Mass Spectrometry
Depth profile analysis of nickel silicide films using time-of-flight secondary ion mass spectrometry (TOF-SIMS)
Impact of nitridation engineering on microscopic SILC characteristics of sub-10-nm tunnel dielectrics
Temperature dependence of TDDB characteristics of thin SiO2film for flash memory
Degradation of the characteristics of p+poly MOS capacitors with NO nitrided gate oxide due to post nitrogen annealing